IPP60R280C6XKSA1

Infineon CoolMOS C6 系列 Si N沟道 MOSFET IPP60R280C6XKSA1, 13.8 A, Vds=650 V, 3引脚 TO-220封装

CoolMOS™C6/C7 功率 MOSFET

得捷:
IPP60R280 - 600V COOLMOS N-CHANN

欧时:
Infineon CoolMOS C6 系列 Si N沟道 MOSFET IPP60R280C6XKSA1, 13.8 A, Vds=650 V, 3引脚 TO-220封装

贸泽:
MOSFET N-Ch 600V 13.8A TO220-3 CoolMOS C6

艾睿:
This IPP60R280C6XKSA1 power MOSFET from Infineon Technologies can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 104000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device is made with coolmos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.

TME:
Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO220-3

Verical:
Trans MOSFET N-CH 600V 13.8A 3-Pin3+Tab TO-220 Tube