IPA60R385CPXKSA1

INFINEON  IPA60R385CPXKSA1  功率场效应管, MOSFET, N沟道, 9 A, 650 V, 0.35 ohm, 10 V, 3 V

CoolMOS™CP 功率 MOSFET

欧时:
Infineon CoolMOS CP 系列 Si N沟道 MOSFET IPA60R385CPXKSA1, 9 A, Vds=600 V, 3引脚 TO-220封装

得捷:
MOSFET N-CH 600V 9A TO220-FP

贸泽:
MOSFET LOW POWER_LEGACY

e络盟:
晶体管, MOSFET, N沟道, 9 A, 650 V, 0.35 ohm, 10 V, 3 V

艾睿:
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Infineon Technologies&s; IPA60R385CPXKSA1 power MOSFET can provide a solution. Its maximum power dissipation is 31000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes coolmos technology.

TME:
Transistor: N-MOSFET; unipolar; 600V; 9A; 31W; TO220FP

Verical:
Trans MOSFET N-CH 600V 9A 3-Pin3+Tab TO-220FP Tube

Newark:
# INFINEON  IPA60R385CPXKSA1  Power MOSFET, N Channel, 9 A, 650 V, 0.35 ohm, 10 V, 3 V

Win Source:
MOSFET N-CH 600V 9A TO220-FP / N-Channel 600 V 9A Tc 31W Tc Through Hole PG-TO220-3-31