ON SEMICONDUCTOR MJB44H11G. 功率晶体管, NPN, 80V, D2-PAK
The is a 80V NPN complementary Power Transistor designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers.
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- Low collector to emitter saturation voltage VCE sat = 1V maximum at 8A
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- Fast switching speeds
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- Complementary pairs simplifies designs
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- ESD rating - 3B > 8000V human body model, C > 400V machine model
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- 5V Emitter to base voltage VEBO
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- 2.5°C/W Thermal resistance, junction to case
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- 7.5°C/W Thermal resistance, junction to ambient
频率 50 MHz
额定电压DC 80.0 V
额定电流 10.0 A
针脚数 3
极性 NPN
耗散功率 50 W
击穿电压集电极-发射极 80 V
集电极最大允许电流 10A
最小电流放大倍数hFE 40 @4A, 1V
额定功率Max 2 W
直流电流增益hFE 40
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2000 mW
安装方式 Surface Mount
引脚数 3
封装 TO-263-3
封装 TO-263-3
材质 Silicon
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
制造应用 Power Management, 电源管理, 工业, Industrial
RoHS标准
含铅标准 Lead Free
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
MJB44H11G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
NJVMJB44H11T4G 安森美 | 完全替代 | MJB44H11G和NJVMJB44H11T4G的区别 |
MJB44H11 安森美 | 完全替代 | MJB44H11G和MJB44H11的区别 |
MJB44H11T4 安森美 | 完全替代 | MJB44H11G和MJB44H11T4的区别 |