ON SEMICONDUCTOR MJF45H11G 单晶体管 双极, PNP, -80 V, 40 MHz, 36 W, -10 A, 40 hFE 新
Thanks to , your circuit can handle high levels of voltage using the PNP general purpose bipolar junction transistor. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 2000 mW. This product comes in rail packaging to keep individual parts separated and protected. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V.
频率 40 MHz
额定电压DC -80.0 V
额定电流 41.0 A
针脚数 3
极性 PNP, P-Channel
耗散功率 36 W
击穿电压集电极-发射极 80 V
热阻 3.5℃/W RθJC
集电极最大允许电流 10A
最小电流放大倍数hFE 40 @4A, 1V
额定功率Max 2 W
直流电流增益hFE 40
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2000 mW
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.63 mm
宽度 4.9 mm
封装 TO-220-3
材质 Silicon
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
MJF45H11G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
MJF45H11 安森美 | 类似代替 | MJF45H11G和MJF45H11的区别 |