1990MHz, 100W, 28V GSM/GSM EDGE RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS
The MW7IC18100N wideband integrated circuit is designed with on-chip matching that makes it usable from 1805 to 2050 MHz. This multi-stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulations including GSM EDGE and CDMA.
Final Application
• Typical GSM Performance: VDD = 28 Volts, IDQ1 = 180 mA, IDQ2 = 1000 mA,Pout = 100 Watts CW, 1805-1880 MHz or 1930-1990 MHz
Power Gain 30 dB
Power Added Efficiency 48%
GSM EDGE Application
• Typical GSM EDGE Performance: VDD = 28 Volts, IDQ1 = 215 mA, IDQ2 =800 mA, Pout = 40 Watts Avg., 1805-1880 MHz or 1930-1990 MHz
Power Gain 31 dB
Power Added Efficiency 35%
Spectral Regrowth @ 400 kHz Offset = -63 dBc
Spectral Regrowth @ 600 kHz Offset = -80 dBc
EVM 1.5% rms
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 1990 MHz, 100 Watts CW Output Power
• Stable into a 5:1 VSWR. All Spurs Below -60 dBc @ 1 mW to 120 W CW Pout.
Features
• Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source Scattering Parameters
• On-Chip Matching 50 Ohm Input, DC Blocked
• Integrated Quiescent Current Temperature Compensation with Enable/Disable Function 1
• Integrated ESD Protection
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.