74AHC1G09GW

74AHC1G09GW概述

2输入与门与开漏输出 2-input AND gate with open-drain output

General description

The 74AHC1G09 is a high-speed Si-gate CMOS device. The 74AHC1G09 provides the 2-input AND function with open-drain output. The output of the 74AHC1G09 is an open drain and can be connected to other open-drain outputs to implement active-LOW, wired-OR or active-HIGH wired-AND functions. For digital operation this device must have a pull-up resistor to establish a logic HIGH level.

Features

■ High noise immunity

■ Low power dissipation

■ SOT353-1 and SOT753 package options

■ ESD protection:

  ◆ HBM JESD22-A114E: exceeds 2000 V

  ◆ MM JESD22-A115-A: exceeds 200 V

  ◆ CDM JESD22-C101C: exceeds 1000 V

■ Specified from −40 °C to +85 °C and from −40 °C to +125 °C.

74AHC1G09GW中文资料参数规格
封装参数

安装方式 Surface Mount

封装 SOT-353

外形尺寸

封装 SOT-353

其他

产品生命周期 Unknown

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

香港进出口证 NLR

数据手册

在线购买74AHC1G09GW
型号: 74AHC1G09GW
制造商: NXP 恩智浦
描述:2输入与门与开漏输出 2-input AND gate with open-drain output

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