NGTB30N135IHRWG

ON SEMICONDUCTOR  NGTB30N135IHRWG  单晶体管, IGBT, 60 A, 2.3 V, 394 W, 1.35 kV, TO-247, 3 引脚

IGBT 分立，On Semiconductor

绝缘栅级双极性 IGBT，用于电动机驱动器和其他高电流切换应用。

### IGBT 分立，On Semiconductor

绝缘栅级双极性晶体管或 IGBT 是一种三端子功率半导体设备，以高效和快速切换著称。 IGBT 通过将用于控制输入的隔离栅极 FET 和用作开关的双极性功率晶体管组合在单个设备中，将 MOSFET 的简单栅极驱动特性与双极性晶体管的高电流和低饱和电压能力组合在一起。

得捷:
IGBT TRENCH/FS 1350V 60A TO247

立创商城:
NGTB30N135IHRWG

欧时:
ON Semiconductor NGTB30N135IHRWG N沟道 IGBT, Vce=1350 V, 60 A, 1MHz, 3引脚 TO-247封装

贸泽:
IGBT Transistors 1350V/30A IGBT FSII TO-24

e络盟:
单晶体管, IGBT, 60 A, 2.3 V, 394 W, 1.35 kV, TO-247, 3 引脚

艾睿:
This powerful and secure NGTB30N135IHRWG IGBT transistor from ON Semiconductor will make sure your circuit works properly. Its maximum power dissipation is 394000 mW. It has a maximum collector emitter voltage of 1350 V. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This IGBT transistor has an operating temperature range of -40 °C to 175 °C. It is made in a single configuration.

安富利:
Trans IGBT Chip N-CH 1.35kV 60A 3-Pin TO-247 Rail

Verical:
Trans IGBT Chip N-CH 1350V 60A 394000mW 3-Pin3+Tab TO-247 Tube

Newark:
# ON SEMICONDUCTOR  NGTB30N135IHRWG  IGBT Single Transistor, 60 A, 2.3 V, 394 W, 1.35 kV, TO-247, 3 Pins