NVTR0202PLT1G

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NVTR0202PLT1G概述

功率MOSFET中的???? 20 V,A ???? 400毫安, PA ????频道SOTA ???? 23包 Power MOSFET −20 V, −400 mA, P−Channel SOT−23 Package

表面贴装型 P 通道 400mA(Ta) 225mW(Ta) SOT-23


得捷:
MOSFET P-CH 20V 400MA SOT23


立创商城:
NVTR0202PLT1G


贸泽:
MOSFET PFET 20V 0.4A 80MOH


艾睿:
Looking for a component that can both amplify and switch between signals within your circuit? The NVTR0202PLT1G power MOSFET from ON Semiconductor provides the solution. Its maximum power dissipation is 225 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.


安富利:
Trans MOSFET P-CH 20V 0.4A 3-Pin SOT-23 T/R


Verical:
Trans MOSFET P-CH 20V 0.4A Automotive 3-Pin SOT-23 T/R


Win Source:
MOSFET P-CH 20V 0.4A SOT23


NVTR0202PLT1G中文资料参数规格
技术参数

极性 P-CH

耗散功率 0.225 W

漏源极电压Vds 20 V

连续漏极电流Ids 0.4A

上升时间 6 ns

输入电容Ciss 70pF @5VVds

下降时间 4 ns

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 225mW Ta

封装参数

安装方式 Surface Mount

引脚数 3

封装 SOT-23-3

外形尺寸

封装 SOT-23-3

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

在线购买NVTR0202PLT1G
型号: NVTR0202PLT1G
制造商: ON Semiconductor 安森美
描述:功率MOSFET中的???? 20 V,A ???? 400毫安, PA ????频道SOTA ???? 23包 Power MOSFET −20 V, −400 mA, P−Channel SOT−23 Package

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