2N5551S

2N5551S NPN三极管 180V 600mA/0.6a 100~400MHz 80~250 500mV/0.5V SOT-23/SC-59 marking/标记 ZF 高压放大

集电极-基极反向击穿电压VBRCBOCollector-Base VoltageVCBO| 180V \---|--- 集电极-发射极反向击穿电压VBRCEOCollector-Emitter VoltageVCEO| 160V 集电极连续输出电流ICCollector CurrentIC| 600mA/0.6A 截止频率fTTranstion FrequencyfT| 100~400MHz 直流电流增益hFEDC Current GainhFE| 80~250 管压降VCE（sat）Collector-Emitter Saturation Voltage| 500mV/0.5V 耗散功率PcPower Dissipation| 625mW/0.625W Description & Applications| NPN Epitaxial Planar Silicon Transistor Descriptions • General purpose amplifier • High voltage application Features • High collector breakdown voltage • Low collector saturation voltage • Complementary to 2N5401 描述与应用| NPN平面外延硅晶体管 简述 •通用放大器 •高电压施加 特点 •高集电极击穿电压 •低集电极饱和电压 •互补型2N5401