NST3904F3T5G

ON SEMICONDUCTOR  NST3904F3T5G  单晶体管 双极, NPN, 40 V, 200 MHz, 347 mW, 200 mA, 30 hFE

Implement this versatile NPN GP BJT from into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 347 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V.