NE651R479A-T1

NE651R479A-T1 MESFET-N沟道 15V 0.35A 79A marking/标记 TH12 高频应用/高效率

N-CHANNEL GaAs MES FET DESCRIPTION The NE650R479A is a 0.4 W GaAs MES FET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 0.4 watt of output power CW with high linear gain, high efficiency, excellent distortion and is suitable as a driver amplifier for our NE6500379A etc. Reliability and performance uniformity are assured by ’s stringent quality and control procedures. 0.4W L, S-BAND POWER GaAs MES FET High Output Power : PO 1 dB = +26 dBm High Linear Gain : 14 dB High Power Added Efficiency