HUF75345P3

UltraFET® MOSFET，Fairchild SemiconductorUItraFET® Trench MOSFET 组合了在功率转换应用中实现基准效率的特性。 该设备可耐受雪崩模式中的高能量，且二极管展现出非常短的反向恢复时间和积累电荷。 为高频率时的效率、最低 RDS（接通）、低 ESR 和低总栅极电荷和 Miller 栅极电荷进行了优化。 应用：高频直流-直流转换器、开关调节器、电动机驱动器、低电压总线开关和电源管理。### MOSFET 晶体管，Fairchild SemiconductorFairchild 提供大量 MOSFET 设备组合，包括高电压 >250V 低电压 Fairchild MOSFET 通过降低电压峰值和过冲提供极佳的设计可靠性，以减少结电容和反向恢复电荷，无需额外外部元件即可保持系统启动和运行更长时间。

The is a N-channel Power MOSFET manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible ON-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, relay drivers, low-voltage bus switches and power management in battery-operated products.

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Peak current vs. pulse width curve

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UIS Rating curve

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Simulation models - Temperature compensated PSPICE® & SABER™, thermal impedance SPICE & SABER