N 通道功率 MOSFET,30V,ON Semiconductor### MOSFET 晶体管,ON Semiconductor
N 通道功率 MOSFET,30V,
### MOSFET ,ON Semiconductor
得捷:
MOSFET N-CH 30V 13A/130A 5DFN
欧时:
ON Semiconductor Si N沟道 MOSFET NTMFS4835NT1G, 104 A, Vds=30 V, 8引脚 SO-8FL封装
e络盟:
晶体管, MOSFET, N沟道, 104 A, 30 V, 0.0025 ohm, 11.5 V, 2.5 V
艾睿:
Looking for a component that can both amplify and switch between signals within your circuit? The NTMFS4835NT1G power MOSFET from ON Semiconductor provides the solution. Its maximum power dissipation is 62500 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
Allied Electronics:
NTMFS4835NT1G N-channel MOSFET Transistor; 104 A; 30 V; 8-Pin SO-8FL
安富利:
Trans MOSFET N-CH 30V 20A 8-Pin SO-FL T/R
Chip1Stop:
Trans MOSFET N-CH 30V 20A 5-Pin4+Tab SO-FL T/R
Verical:
Trans MOSFET N-CH 30V 20A 5-Pin4+Tab SO-FL T/R
力源芯城:
30V,104A,N沟道MOSFET
Win Source:
MOSFET N-CH 30V 12A SO-8FL
DeviceMart:
MOSFET N-CH 30V 12A SO-8FL
针脚数 8
漏源极电阻 0.0025 Ω
极性 N-Channel
耗散功率 2.27 W
阈值电压 2.5 V
漏源极电压Vds 30 V
漏源击穿电压 30.0 V
连续漏极电流Ids 20.0 A, 104 A
输入电容Ciss 3100pF @12VVds
额定功率Max 890 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 890mW Ta, 62.5W Tc
安装方式 Surface Mount
引脚数 5
封装 SO-FL
长度 5.1 mm
宽度 6.1 mm
高度 1.1 mm
封装 SO-FL
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
NTMFS4835NT1G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
NTMFS4835NT3G 安森美 | 功能相似 | NTMFS4835NT1G和NTMFS4835NT3G的区别 |