NVMFD5C650NLWFT1G概述
双路场效应管, MOSFET, 双N沟道, 111 A, 60 V, 0.0035 ohm, 10 V, 2.2 V
Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
Features | | Benefits
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- Low on resistance
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- Minimal conduction losses
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- High current capability
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- Robust load performance
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- 100% avalanche tested
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- Safeguard against voltage overstress failures
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- AEC-Q101 Qualified
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- Suitable for automotive applications
NVMFD5C650NLWFT1G中文资料参数规格
技术参数
针脚数 8
漏源极电阻 0.0035 Ω
耗散功率 3.5 W
阈值电压 2.2 V
漏源极电压Vds 60 V
上升时间 24 ns
输入电容Ciss 2546pF @25VVds
下降时间 13 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 3500 mW
封装参数
安装方式 Surface Mount
引脚数 8
封装 DFN-8
外形尺寸
封装 DFN-8
物理参数
工作温度 -55℃ ~ 175℃ TJ
其他
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Low side / high side driver, Solenoid driver
符合标准
RoHS标准
含铅标准 Lead Free
在线购买NVMFD5C650NLWFT1G
型号： NVMFD5C650NLWFT1G
制造商：
ON Semiconductor
安森美
描述：双路场效应管, MOSFET, 双N沟道, 111 A, 60 V, 0.0035 ohm, 10 V, 2.2 V