静态随机存取存储器 8Mb,High-Speed/Low Power,Async with ECC,512K x 16,10ns,2.4V-3.6V,48 Ball mBGA 6x8 mm, ERR1/2 pins, RoHS
SRAM - Asynchronous Memory IC 8Mb 512K x 16 Parallel 10ns 48-TFBGA 6x8
立创商城:
IS61WV51216EEBLL 10B2LI TR
得捷:
IC SRAM 8MBIT PARALLEL 48TFBGA
贸泽:
静态随机存取存储器 8Mb,High-Speed/Low Power,Async with ECC,512K x 16,10ns,2.4V-3.6V,48 Ball mBGA 6x8 mm, ERR1/2 pins, RoHS