IR2109S

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IR2109S概述

600V Half Bridge Driver IC with typical 0.2A source and 0.35A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. Also available in 8 Lead PDIP, 14 Lead SOIC, and 14 Lead PDIP.

Summary of Features:

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Floating channel designed for bootstrap operation
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Fully operational to +600 V
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Tolerant to negative transient voltage
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dV/dt immune
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Gate drive supply range from 10 to 20 V
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Undervoltage lockout for both channels
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3.3 V, 5 V, and 15 V logic input compatible
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Cross-conduction prevention logic
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Matched propagation delay for both channels
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High side output in phase with IN input
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Logic and power ground + /- 5 V offset
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Internal 540ns dead-time
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Lower di/dt gate driver for better noise immunity
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Shut down input turns off both channels
IR2109S中文资料参数规格
技术参数

电源电压DC 20.0V max

上升/下降时间 150ns, 50ns

输出接口数 2

耗散功率 625 mW

产品系列 IR2109

下降时间Max 80 ns

上升时间Max 220 ns

耗散功率Max 625 mW

电源电压 10V ~ 20V

封装参数

安装方式 Surface Mount

引脚数 8

封装 SOIC-8

外形尺寸

封装 SOIC-8

物理参数

工作温度 -40℃ ~ 150℃ TJ

其他

产品生命周期 Obsolete

包装方式 Tube

符合标准

RoHS标准 Non-Compliant

含铅标准 Contains Lead

数据手册

IR2109S引脚图与封装图
IR2109S电路图
在线购买IR2109S
型号: IR2109S
制造商: Infineon 英飞凌
描述:600V Half Bridge Driver IC with typical 0.2A source and 0.35A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. Also available in 8 Lead PDIP, 14 Lead SOIC, and 14 Lead PDIP.
替代型号IR2109S
型号/品牌 代替类型 替代型号对比

IR2109S

Infineon 英飞凌

当前型号

当前型号

IR2109SPBF

英飞凌

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IR2109S和IR2109SPBF的区别

IR2109STRPBF

英飞凌

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IR2109S和IR2109STRPBF的区别

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