INFINEON BSC16DN25NS3GATMA1 晶体管, MOSFET, N沟道, 10.9 A, 250 V, 0.146 ohm, 10 V, 3 V
The BSC16DN25NS3 G is a N-channel Power MOSFET produce based on OptiMOS™ leading benchmark technology. It is perfectly suited for synchronous rectification in 48V systems, DC-to-DC converters, uninterruptable power supplies UPS and inverters.
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- Industry"s lowest RDS ON
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- Lowest Qg and Qgd
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- World"s lowest FOM and MSL 1 rated
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- Highest efficiency
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- Highest Power density
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- Lowest board space consumption
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- Minimal device paralleling required
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- Environmentally friendly
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- Easy-to-design-in products
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- Qualified according to JEDEC for target application
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- Halogen-free, Green device
额定功率 62.5 W
针脚数 8
漏源极电阻 0.146 Ω
极性 N-Channel
耗散功率 62.5 W
阈值电压 3 V
漏源极电压Vds 250 V
连续漏极电流Ids 10.9A
上升时间 4 ns
输入电容Ciss 690pF @100VVds
下降时间 4 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 62500 mW
引脚数 8
封装 TDSON
封装 TDSON
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 工业, Isolated DC-DC converters, 电机驱动与控制, 照明, Class D audio amplifiers, Synchronous rectification for AC-DC SMPS, Lighting, 电源管理, Power Management, Audio, Motor Drive & Control, 音频, Industrial
RoHS标准
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17