BSC0910NDIATMA1

BSC0910NDIATMA1图片1
BSC0910NDIATMA1图片2
BSC0910NDIATMA1概述

双路场效应管, MOSFET, 双N沟道, 40 A, 25 V, 0.0035 ohm, 10 V, 2 V

Description:

With the new OptiMOS™ 25V product family, sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications.

Available in halfbridge configuration power stage 5x6

 

Benefits:

.
Save overall system costs by reducing the number of phases in multiphase converters
.
Reduce power losses and increase efficiency for all load conditions
.
Save space with smallest packages like CanPAK™, S3O8 or system in package solution
.
Minimize EMI in the system making external snubber networks obsolete and the products easy to design-in
BSC0910NDIATMA1中文资料参数规格
技术参数

额定功率 2.5 W

针脚数 8

漏源极电阻 0.0035 Ω

极性 N-CH

耗散功率 2.5 W

阈值电压 2 V

漏源极电压Vds 25 V

连续漏极电流Ids 22A/36A

输入电容Ciss 4500pF @12VVds

额定功率Max 1 W

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 1 W

封装参数

安装方式 Surface Mount

引脚数 8

封装 PG-TISON-8

外形尺寸

封装 PG-TISON-8

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Active

包装方式 Tape & Reel TR

制造应用 Mainboard, VRD/VRM, Onboard charger

符合标准

RoHS标准

含铅标准 Lead Free

数据手册

在线购买BSC0910NDIATMA1
型号: BSC0910NDIATMA1
描述:双路场效应管, MOSFET, 双N沟道, 40 A, 25 V, 0.0035 ohm, 10 V, 2 V

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