双路场效应管, MOSFET, 双N沟道, 40 A, 25 V, 0.0035 ohm, 10 V, 2 V
Description:
With the new OptiMOS™ 25V product family, sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications.
Available in halfbridge configuration power stage 5x6
Benefits:
额定功率 2.5 W
针脚数 8
漏源极电阻 0.0035 Ω
极性 N-CH
耗散功率 2.5 W
阈值电压 2 V
漏源极电压Vds 25 V
连续漏极电流Ids 22A/36A
输入电容Ciss 4500pF @12VVds
额定功率Max 1 W
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 1 W
安装方式 Surface Mount
引脚数 8
封装 PG-TISON-8
封装 PG-TISON-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Mainboard, VRD/VRM, Onboard charger
RoHS标准
含铅标准 Lead Free