NXP BUK78150-55A 晶体管, MOSFET, N沟道, 5.5 A, 55 V, 150 mohm, 10 V, 3 V
The is a N-channel standard level enhancement-mode FET in a plastic package using TrenchMOS® technology. The device has been designed and qualified to the appropriate AEC-Q101 standard for use in automotive critical applications.
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- Low conduction losses due to low ON-state resistance
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- Suitable for standard level gate drive sources
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- -55 to 150°C Junction temperature range
针脚数 3
漏源极电阻 150 mΩ
极性 N-Channel
耗散功率 8 W
阈值电压 3 V
漏源极电压Vds 55 V
连续漏极电流Ids 5.50 A
输入电容Ciss 170pF @25VVds
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 8 W
安装方式 Surface Mount
引脚数 3
封装 SOT-223
长度 6.7 mm
宽度 3.7 mm
高度 1.7 mm
封装 SOT-223
产品生命周期 Unknown
包装方式 Cut Tape CT
制造应用 Automation & Process Control, Lighting, Automotive, Power Management, Motor Drive & Control, Industrial
RoHS标准 RoHS Compliant
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
BUK78150-55A NXP 恩智浦 | 当前型号 | 当前型号 |
PHT6N06T 恩智浦 | 类似代替 | BUK78150-55A和PHT6N06T的区别 |
PHT6N06LT 恩智浦 | 类似代替 | BUK78150-55A和PHT6N06LT的区别 |
BUK78150-55A,115 恩智浦 | 功能相似 | BUK78150-55A和BUK78150-55A,115的区别 |