BS62LV4006SIP55

BS62LV4006SIP55图片1
BS62LV4006SIP55图片2
BS62LV4006SIP55图片3
BS62LV4006SIP55概述

512k x 8位低功耗/低电压 COMS SRAM,工业级温度范围

DESCRIPTION

The BS62LV4006 is a high performance, very low power CMOS Static Random Access Memory organized as 524,288 by 8 bits and operates form a wide range of 2.4V to 5.5V supply voltage.

Advanced CMOS technology and circuit techniques provide both high speed and low power features with typical CMOS standby current of 0.25uA at 3.0V/25°C and maximum access time of 55ns at 3.0V/85°C.

FEATURES

• Wide VCC operation voltage : 2.4V ~ 5.5V

• Very low power consumption:

      VCC = 3.0V  Operationcurrent :  30mA Max.  at 55ns

                                                 2mA Max.  at 1MHz

      Standby current :  0.25uA Typ.  at 25OC

      VCC = 5.0V  Operationcurrent :  70mA Max.  at 55ns

                                                 10mA Max.  at 1MHz

       Standby current :  1.5uA Typ.  at 25OC

• Highspeed access time:

-55  55ns Max. at VCC=3.0~5.5V

-70  70ns Max. at VCC=2.7~5.5V

• Automatic power down whenchip is deselected

BS62LV4006SIP55中文资料参数规格
技术参数

存取时间 55 ns

内存容量 500000 B

工作温度Max 85 ℃

工作温度Min -40 ℃

电源电压 2.4V ~ 5.5V

电源电压Max 5.5 V

电源电压Min 2.4 V

封装参数

安装方式 Surface Mount

引脚数 32

封装 SOP

外形尺寸

封装 SOP

物理参数

工作温度 -40℃ ~ 85℃

其他

产品生命周期 Obsolete

包装方式 Each

符合标准

RoHS标准 RoHS Compliant

数据手册

在线购买BS62LV4006SIP55
型号: BS62LV4006SIP55
制造商: BSI
描述:512k x 8位低功耗/低电压 COMS SRAM,工业级温度范围
替代型号BS62LV4006SIP55
型号/品牌 代替类型 替代型号对比

BS62LV4006SIP55

BSI

当前型号

当前型号

BS62LV4006SIG55

BSI

功能相似

BS62LV4006SIP55和BS62LV4006SIG55的区别

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