BSB008NE2LX

BSB008NE2LX图片1
BSB008NE2LX概述

25V,0.8mΩ,180A,N沟道功率MOSFET

Description:

With the new OptiMOS™ 25V product family, sets new standards in power density and energy efficiency for discrete power MOSFETs. Lowest on-state resistance in small footprint packages make OptiMOS™ 25V the best choice for the demanding requirements of battery management, or-ing, e-fuse and hot-swap application. CanPAK™ package allows double sided cooling in thermally challenging applications. With the new OptiMOS™ 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package.

Summary of Features:

.
Lowest on-state resistance
.
High DC and pulsed current capability
.
Easy to design in
.
Double side cooling

Benefits:

.
Increased battery lifetime/system efficiency
.
Saving space reducing the number of devices needed
.
Saving costs
BSB008NE2LX中文资料参数规格
技术参数

额定功率 89 W

极性 N-CH

漏源极电压Vds 25 V

连续漏极电流Ids 46A

上升时间 47.2 ns

下降时间 32.4 ns

封装参数

安装方式 Surface Mount

封装 WDSON-2

外形尺寸

长度 6.35 mm

宽度 5.05 mm

高度 0.7 mm

封装 WDSON-2

物理参数

工作温度 -40℃ ~ 150℃

其他

产品生命周期 Active

包装方式 Tape & Reel TR

制造应用 e-fuse, Hot-swap, Or-ing in power supply

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

在线购买BSB008NE2LX
型号: BSB008NE2LX
描述:25V,0.8mΩ,180A,N沟道功率MOSFET

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