BTS612N1E3230

BTS612N1E3230图片1
BTS612N1E3230概述

双通道海赛德智能电源开关 Smart Two Channel Highside Power Switch

General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic

feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions.

Features

•Overload protection

•Current limitation

•Short circuit protection

•Thermal shutdown

•Overvoltage protection including load dump

•Fast demagnetization of inductive loads

•Reverse battery protection1

•Undervoltage and overvoltage shutdown with auto-restart and hysteresis

•Open drain diagnostic output

•Open load detection in OFF-state

•CMOS compatible input

•Loss of ground and loss of Vbbprotection

• Electrostatic discharge ESD protection

Application

• µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads

•All types of resistive, inductive and capacitve loads

•Replaces electromechanical relays, fuses and discrete circuits

BTS612N1E3230中文资料参数规格
封装参数

安装方式 Through Hole

封装 TO-220

外形尺寸

封装 TO-220

其他

产品生命周期 Obsolete

符合标准

RoHS标准 RoHS Compliant

数据手册

在线购买BTS612N1E3230
型号: BTS612N1E3230
制造商: Infineon 英飞凌
描述:双通道海赛德智能电源开关 Smart Two Channel Highside Power Switch

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