BSP206

BSP206 P沟道MOS场效应管 -60V -359mA 6ohm SOT-223 marking/标记 高速开关 无二次击穿

最大源漏极电压VdsDrain-Source Voltage| -60V \---|--- 最大栅源极电压Vgs±Gate-Source Voltage| -60V 最大漏极电流IdDrain Current| -0.359A 源漏极导通电阻RdsDrain-Source On-State Resistance| 6Ω @-200mA,-10V 开启电压Vgs（th）Gate-Source Threshold Voltage| -1.5--3.5V 耗散功率PdPower Dissipation| 1.5W Description & Applications| FEATURES • Very low RDSon • Direct interface to C-MOS, TTL, • High-speed switching • No secondary breakdown 描述与应用| •非常低的RDS（on） •直接连接C-MOS，TTL， •高速开关 •无二次击穿

Win Source:
P-channel enhancement mode vertical D-MOS transistor