CY62157EV30LL-45BVXI

SRAM 8 Mb 512 K x 16 3 V 超低待机和有功功率 48-VFBGA 工业温度

异步微功耗 MoBL SRAM 存储器，

MoBL 低功率 SRAM 存储器设备具有高效率，且可提供行业领先的待机功耗（最大）规格。

### SRAM（静态随机存取存储器）

立创商城:
CY62157EV30LL-45BVXI

得捷:
IC SRAM 8MBIT PARALLEL 48VFBGA

欧时:
Cypress Semiconductor CY62157EV30LL-45BVXI, 8Mbit SRAM 内存, 1M x 8 位，512K x 16 位, 1MHz, 2.2 → 3.6 V

贸泽:
静态随机存取存储器 8Mb 3V 45ns 512K x 16 LP 静态随机存取存储器

艾睿:
SRAM Chip Async Single 3V 8M-bit 512K x 16 45ns 48-Pin VFBGA Tray

安富利:
SRAM Chip Async Single 2.5V/3.3V 8M-Bit 512K x 16 45ns 48-Pin VFBGA

Chip1Stop:
SRAM Chip Async Single 3V 8M-Bit 512K x 16 45ns 48-Pin VFBGA Tray

Verical:
SRAM Chip Async Single 3V 8M-bit 512K x 16 45ns 48-Pin VFBGA Tray

Newark:
IC, SRAM, 8 Mbit, 512K x 16bit, 45 ns Access Time, Parallel Interface, 2.2 V to 3.6 V supply, BGA-48

DeviceMart:
IC SRAM 8MBIT 45NS 48VFBGA

Win Source:
IC SRAM 8MBIT 45NS 48VFBGA