FDC633N

N沟道增强型网络场效晶体管 N-Channel Enhancement Mode Field Effect Transistor

最大源漏极电压Vds Drain-Source Voltage| 30V \---|--- 最大栅源极电压Vgs± Gate-Source Voltage| 8V 最大漏极电流Id Drain Current| 5.2A 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance| 54mΩ@ VGS = 2.5V, ID =4.5A 开启电压Vgs（th） Gate-Source Threshold Voltage| 0.4~1V 耗散功率Pd Power Dissipation| 1.6W Description & Applications| N-Channel Enhancement Mode Field Effect Transistor General Description This N-Channel enhancement mode power field effect transistors is produced using "s proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMICA cards, and other battery powered circuits where fast switching,low in-line power loss and resistance to transients are needed in a very small outline surface mount package. Features SuperSOT-6 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDSON Exceptional on-resistance and maximum DC current capability. 描述与应用| N沟道增强型场效应 概述 这N沟道增强型功率场效应晶体管的生产采用飞兆半导体专有的，高细胞密度，DMOS技术。这非常高密度的过程是量身定做，以尽量减少通态电阻。这些器件特别适合于低电压应用在笔记本电脑，便携式电话，PCMICA卡和其他电池供电电路中快速开关，低线的功率损耗和抗瞬变都需要在一个非常小外形表面贴装封装。 特点 的SuperSOT-6包装设计采用铜引线框架的卓越的热性能和电气性能。 高密度电池设计极低的RDS（ON） 卓越的导通电阻和最大DC电流能力。