FQD11P06

60V P沟道MOSFET 60V P-Channel MOSFET

General Description

These P-Channel enhancement mode power field effect transistors are produced using ís proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.

Features

-9.4A, -60V, RDSon= 0.185Ω@VGS= -10 V

Low gate charge typical 13 nC

Low Crss typical 45 pF

Fast switching

100% avalanche tested

Improved dv/dt capability