MOSFET DRVR 600V 2.3A 2Out Hi/Lo Side Half Brdg Inv/Non-Inv 8Pin PDIP Tube
Description
The IR21834S are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable rugge dized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.
Features
•Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
•Gate drive supply range from 10 to 20V
•Undervoltage lockout for both channels
•3.3V and 5V input logic compatible
•Matched propagation delay for both channels
•Logic and power ground +/- 5V offset.
•Lower di/dt gate driver for better noise immunity
•Output source/sink current capability 1.4A/1.8A
•Also available LEAD-FREE PbF
电源电压DC 10.0V min
输出接口数 2
输出电压 620 V
输出电流 1.90 A
耗散功率 1000 mW
产品系列 IR2183
上升时间 40.0 ns
下降时间Max 35 ns
上升时间Max 60 ns
工作温度Max 125 ℃
工作温度Min -40 ℃
耗散功率Max 1000 mW
电源电压 10V ~ 20V
安装方式 Through Hole
引脚数 8
封装 DIP-8
封装 DIP-8
工作温度 -40℃ ~ 125℃
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC