IS42S16800E-75EBLI-TR

DRAM Chip SDRAM 128Mbit 8Mx16 3.3V 54Pin TFBGA T/R

* Clock frequency: 200, 166, 143, 133 MHz * Fully synchronous; all signals referenced to a positive clock edge * Internal bank for hiding row access/precharge * Power supply Vdd Vddq IS42S81600E 3.3V 3.3V IS42S16800E 3.3V 3.3V * LVTTL interface * Programmable burst length * 1, 2, 4, 8, full page * Programmable burst sequence: Sequential/Interleave * Auto Refresh CBR * Self Refresh * 4096 refresh cycles every 64 ms * Random column address every clock cycle * Programmable CAS latency 2, 3 clocks * Burst read/write and burst read/single write operations capability * Burst termination by burst stop and precharge command * Industrial Temperature Availability