VISHAY IRFL110PBF. 晶体管, MOSFET, N沟道, 1.5 A, 100 V, 540 mohm, 10 V, 4 V
The is a 100V N-channel Power MOSFET designed for fast switching, rugged device design and low on-resistance. The SOT-223 package is designed for surface-mount using vapour phase, infra-red or wave soldering techniques. Its unique package design allows for easy automatic pick-and place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heat sinking. Power dissipation of greater than 1.25W is possible in a typical surface mount application.
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- Dynamic dV/dt rating
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- Repetitive avalanche rated
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- 150°C Operating temperature
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- Easy to parallel
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- Simple drive requirement
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- Fast switching
额定电压DC 100 V
额定电流 1.50 A
额定功率 3.1 W
针脚数 3
漏源极电阻 0.54 Ω
极性 N-Channel
耗散功率 3.1 W
阈值电压 4 V
输入电容 180pF @25V
漏源极电压Vds 100 V
漏源击穿电压 100 V
连续漏极电流Ids 1.50 A
上升时间 16 ns
输入电容Ciss 180pF @25VVds
下降时间 9.4 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2 W
安装方式 Surface Mount
引脚数 3
封装 SOT-223
长度 6.7 mm
宽度 3.7 mm
高度 1.45 mm
封装 SOT-223
工作温度 -55℃ ~ 150℃
包装方式 Tube
制造应用 电源管理, Power Management
RoHS标准 RoHS Compliant
含铅标准 Lead Free
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
IRFL110PBF Vishay Semiconductor 威世 | 当前型号 | 当前型号 |
IRFL4315PBF 英飞凌 | 功能相似 | IRFL110PBF和IRFL4315PBF的区别 |
IRFL110TRPBF 威世 | 功能相似 | IRFL110PBF和IRFL110TRPBF的区别 |