VISHAY IRFI9530GPBF 晶体管, MOSFET, P沟道, 7.7 A, -100 V, 300 mohm, -10 V, -4 V
The is a third generation P-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The FULLPAK eliminates the need for additional insulating hardware. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heat sink. The isolation is equivalent to using a 100 micron mica barrier with standard product. The FULLPAK is mounted to a heat sink using a single clip or by a single screw fixing.
额定电压DC -100 V
额定电流 -7.70 A
针脚数 3
漏源极电阻 0.3 Ω
极性 P-Channel
耗散功率 38 W
漏源极电压Vds 100 V
漏源击穿电压 -100 V
连续漏极电流Ids -7.70 A
上升时间 52.0 ns
隔离电压 2.50 kV
输入电容Ciss 860pF @25VVds
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 42 W
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.63 mm
宽度 4.7 mm
高度 16.12 mm
封装 TO-220-3
工作温度 -55℃ ~ 175℃
包装方式 Tube
制造应用 Power Management, Industrial
RoHS标准 RoHS Compliant
含铅标准 Lead Free