IRF9Z34SPBF

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IRF9Z34SPBF概述

P 通道 MOSFET,30V 至 80V,Vishay Semiconductor### MOSFET 晶体管,Vishay Semiconductor

DESCRIPTION

Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D2PAK is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application.

FEATURES

• Advanced Process Technology

• Surface Mount IRF9Z34S/SiHF9Z34S

• Low-Profile Through-Hole IRSiHF9Z34L/SiHF9Z34L

• 175 °C Operating Temperature

• Fast Switching

• P-Channel

• Fully Avalanche Rated

• Lead Pb-free Available

IRF9Z34SPBF中文资料参数规格
技术参数

漏源极电阻 0.14 Ω

极性 P-Channel

耗散功率 88 W

漏源极电压Vds 60 V

连续漏极电流Ids -18.0 A

上升时间 120 ns

输入电容Ciss 1100pF @25VVds

下降时间 58 ns

工作温度Max 175 ℃

工作温度Min -55 ℃

耗散功率Max 3.7 W

封装参数

安装方式 Surface Mount

引脚数 3

封装 D2PAK-263

外形尺寸

长度 10.67 mm

宽度 9.65 mm

高度 4.83 mm

封装 D2PAK-263

物理参数

工作温度 -55℃ ~ 175℃

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

在线购买IRF9Z34SPBF
型号: IRF9Z34SPBF
描述:P 通道 MOSFET,30V 至 80V,Vishay Semiconductor ### MOSFET 晶体管,Vishay Semiconductor
替代型号IRF9Z34SPBF
型号/品牌 代替类型 替代型号对比

IRF9Z34SPBF

Vishay Semiconductor 威世

当前型号

当前型号

SPB18P06PGATMA1

英飞凌

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IRF9Z34SPBF和SPB18P06PGATMA1的区别

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