P 通道 MOSFET,30V 至 80V,Vishay Semiconductor### MOSFET 晶体管,Vishay Semiconductor
DESCRIPTION
Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2PAK is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application.
FEATURES
• Advanced Process Technology
• Surface Mount IRF9Z34S/SiHF9Z34S
• Low-Profile Through-Hole IRSiHF9Z34L/SiHF9Z34L
• 175 °C Operating Temperature
• Fast Switching
• P-Channel
• Fully Avalanche Rated
• Lead Pb-free Available
漏源极电阻 0.14 Ω
极性 P-Channel
耗散功率 88 W
漏源极电压Vds 60 V
连续漏极电流Ids -18.0 A
上升时间 120 ns
输入电容Ciss 1100pF @25VVds
下降时间 58 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 3.7 W
安装方式 Surface Mount
引脚数 3
封装 D2PAK-263
长度 10.67 mm
宽度 9.65 mm
高度 4.83 mm
封装 D2PAK-263
工作温度 -55℃ ~ 175℃
RoHS标准 RoHS Compliant
含铅标准 Lead Free
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
IRF9Z34SPBF Vishay Semiconductor 威世 | 当前型号 | 当前型号 |
SPB18P06PGATMA1 英飞凌 | 功能相似 | IRF9Z34SPBF和SPB18P06PGATMA1的区别 |