VISHAY IRFZ40PBF 晶体管, MOSFET, N沟道, 35 A, 60 V, 28 mohm, 10 V
The is a HEXFET® third generation N-channel Power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low ON-resistance. The package is universally preferred for commercial-industrial applications at power dissipation levels to approximately 50W.
针脚数 3
漏源极电阻 0.028 Ω
极性 N-Channel
耗散功率 150 W
阈值电压 4 V
输入电容 1900pF @25V
漏源极电压Vds 60 V
连续漏极电流Ids 35.0 A
输入电容Ciss 1900pF @25VVds
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 150 W
安装方式 Through Hole
引脚数 3
封装 TO-220
封装 TO-220
工作温度 -55℃ ~ 175℃
包装方式 Tube
制造应用 Power Management, Industrial, Commercial
RoHS标准 RoHS Compliant
含铅标准 Lead Free
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
IRFZ40PBF Vishay Semiconductor 威世 | 当前型号 | 当前型号 |
RFP50N06 飞兆/仙童 | 功能相似 | IRFZ40PBF和RFP50N06的区别 |