IXFH58N20

IXYS SEMICONDUCTOR  IXFH58N20  晶体管, MOSFET, N沟道, 58 A, 200 V, 40 mohm, 10 V, 4 V

通孔 N 通道 200 V 58A（Tc） 300W（Tc） TO-247AD（IXFH）

得捷:
MOSFET N-CH 200V 58A TO247AD

艾睿:
Looking for a component that can both amplify and switch between signals within your circuit? The IXFH58N20 power MOSFET from Ixys Corporation provides the solution. Its maximum power dissipation is 300000 mW. This device utilizes hiperfet technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.

Chip1Stop:
Trans MOSFET N-CH 200V 58A 3-Pin3+Tab TO-247AD

TME:
Transistor: N-MOSFET; unipolar; 200V; 58A; 300W; TO247

Verical:
Trans MOSFET N-CH 200V 58A 3-Pin3+Tab TO-247AD

Newark:
# IXYS SEMICONDUCTOR  IXFH58N20  MOSFET Transistor, N Channel, 58 A, 200 V, 40 mohm, 10 V, 4 V

Online Components:
Trans MOSFET N-CH 200V 58A 3-Pin3+Tab TO-247AD

Win Source:
MOSFET N-CH 200V 58A TO-247AD