IXYS SEMICONDUCTOR IXFH12N120P 功率场效应管, MOSFET, N沟道, 12 A, 1.2 kV, 1.35 ohm, 10 V, 6.5 V
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
VDSS = 1200V
ID25 = 12A
RDSon ≤ 1.35Ω
trr ≤ 300ns
Features
International standard packages
Fast recovery diode
Unclamped Inductive Switching UIS rated
Low package inductance
- easy to drive and to protect
Advantages
Easy to mount
Space savings
High power density
Applications:
High Voltage Switched-mode and resonant-mode power supplies
High Voltage Pulse Power Applications
High Voltage Discharge circuits in Lasers Pulsers, Spark Igniters, RF Generators
High Voltage DC-DC converters
High Voltage DC-AC inverters
通道数 1
针脚数 3
漏源极电阻 1.35 Ω
极性 N-Channel
耗散功率 543 W
阈值电压 6.5 V
漏源极电压Vds 1.2 kV
连续漏极电流Ids 12A
上升时间 25 ns
输入电容Ciss 5400pF @25VVds
下降时间 34 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 543W Tc
安装方式 Through Hole
引脚数 3
封装 TO-247-3
长度 16.26 mm
宽度 5.3 mm
高度 21.46 mm
封装 TO-247-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/06/15
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
IXFH12N120P IXYS Semiconductor | 当前型号 | 当前型号 |
IXFH12N120 IXYS Semiconductor | 类似代替 | IXFH12N120P和IXFH12N120的区别 |
IXTH12N120 IXYS Semiconductor | 类似代替 | IXFH12N120P和IXTH12N120的区别 |