DPAK N-CH 60V 25A
N-Channel 60V 25A Tc 29W Tc Surface Mount PG-TO252-3-11
得捷:
MOSFET N-CH 60V 25A TO252-31
贸泽:
MOSFET N-Ch 60V 25A DPAK-2 OptiMOS-T2
艾睿:
Increase the current or voltage in your circuit with this IPD25N06S4L30ATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 29000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This device is made with optimos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
Verical:
Trans MOSFET N-CH 60V 25A Automotive 3-Pin2+Tab DPAK T/R
通道数 1
漏源极电阻 23 mΩ
极性 N-CH
耗散功率 29 W
阈值电压 1.2 V
漏源极电压Vds 60 V
漏源击穿电压 60 V
连续漏极电流Ids 25A
上升时间 1 ns
输入电容Ciss 1220pF @25VVds
下降时间 2 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 29W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 6.5 mm
宽度 6.22 mm
高度 2.3 mm
封装 TO-252-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Obsolete
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
IPD25N06S4L30ATMA1 Infineon 英飞凌 | 当前型号 | 当前型号 |
IPD25N06S4L30ATMA2 英飞凌 | 类似代替 | IPD25N06S4L30ATMA1和IPD25N06S4L30ATMA2的区别 |