晶体管, MOSFET, N沟道, 180 A, 40 V, 900 µohm, 10 V, 3 V
表面贴装型 N 通道 180A(Tc) 250W(Tc) PG-TO263-7-3
欧时:
Infineon MOSFET IPB180N04S4H0ATMA1
得捷:
MOSFET N-CH 40V 180A TO263-7-3
e络盟:
晶体管, MOSFET, N沟道, 180 A, 40 V, 900 µohm, 10 V, 3 V
艾睿:
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Infineon Technologies&s; IPB180N04S4H0ATMA1 power MOSFET can provide a solution. Its maximum power dissipation is 250000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This device is made with optimos technology. This N channel MOSFET transistor operates in enhancement mode.
TME:
Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 180A; 250W
Verical:
Trans MOSFET N-CH 40V 180A Automotive 7-Pin6+Tab D2PAK T/R
针脚数 7
极性 N-CH
耗散功率 250 W
阈值电压 3 V
漏源极电压Vds 40 V
连续漏极电流Ids 180A
上升时间 24 ns
输入电容Ciss 17940pF @25VVds
下降时间 49 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 250W Tc
安装方式 Surface Mount
引脚数 7
封装 TO-263-7
封装 TO-263-7
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Thus OptiMOS-T2 40V products based on Infineon’s advanced trench technology will be the benchmark for next generation of automotive applications in energy efficiency, CO2 reduction, e-drives., OptiMOS-T2 40V addresses all kind of EPS motor control, 3-phase and H-bridge motors, HVAC fan control, elec
RoHS标准
含铅标准 无铅