IPB180N04S4H0ATMA1

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IPB180N04S4H0ATMA1概述

晶体管, MOSFET, N沟道, 180 A, 40 V, 900 µohm, 10 V, 3 V

表面贴装型 N 通道 180A(Tc) 250W(Tc) PG-TO263-7-3


欧时:
Infineon MOSFET IPB180N04S4H0ATMA1


得捷:
MOSFET N-CH 40V 180A TO263-7-3


e络盟:
晶体管, MOSFET, N沟道, 180 A, 40 V, 900 µohm, 10 V, 3 V


艾睿:
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Infineon Technologies&s; IPB180N04S4H0ATMA1 power MOSFET can provide a solution. Its maximum power dissipation is 250000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This device is made with optimos technology. This N channel MOSFET transistor operates in enhancement mode.


TME:
Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 180A; 250W


Verical:
Trans MOSFET N-CH 40V 180A Automotive 7-Pin6+Tab D2PAK T/R


IPB180N04S4H0ATMA1中文资料参数规格
技术参数

针脚数 7

极性 N-CH

耗散功率 250 W

阈值电压 3 V

漏源极电压Vds 40 V

连续漏极电流Ids 180A

上升时间 24 ns

输入电容Ciss 17940pF @25VVds

下降时间 49 ns

工作温度Max 175 ℃

工作温度Min -55 ℃

耗散功率Max 250W Tc

封装参数

安装方式 Surface Mount

引脚数 7

封装 TO-263-7

外形尺寸

封装 TO-263-7

物理参数

工作温度 -55℃ ~ 175℃ TJ

其他

产品生命周期 Active

包装方式 Tape & Reel TR

制造应用 Thus OptiMOS-T2 40V products based on Infineon’s advanced trench technology will be the benchmark for next generation of automotive applications in energy efficiency, CO2 reduction, e-drives., OptiMOS-T2 40V addresses all kind of EPS motor control, 3-phase and H-bridge motors, HVAC fan control, elec

符合标准

RoHS标准

含铅标准 无铅

数据手册

在线购买IPB180N04S4H0ATMA1
型号: IPB180N04S4H0ATMA1
描述:晶体管, MOSFET, N沟道, 180 A, 40 V, 900 µohm, 10 V, 3 V

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