IXTK 系列 单 N 沟道 100 V 11 mOhm 1040 W 功率 Mosfet - TO-264
通孔 N 通道 100 V 200A(Tc) 1040W(Tc) TO-264(IXTK)
得捷:
MOSFET N-CH 100V 200A TO264
立创商城:
N沟道 100V 200A
艾睿:
In addition to amplifying electronic signals, you&s;ll be able to switch between various lines with the IXTK200N10L2 power MOSFET, developed by Ixys Corporation. Its maximum power dissipation is 1040000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
Verical:
Trans MOSFET N-CH 100V 200A Automotive 3-Pin3+Tab TO-264
DeviceMart:
MOSFET N-CH 100V 200A TO-264
Win Source:
MOSFET N-CH 100V 200A TO264 / N-Channel 100 V 200A Tc 1040W Tc Through Hole TO-264 IXTK
极性 N-CH
耗散功率 1040 W
漏源极电压Vds 100 V
连续漏极电流Ids 200A
上升时间 225 ns
输入电容Ciss 23000pF @25VVds
额定功率Max 1040 W
下降时间 27 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 1040W Tc
安装方式 Through Hole
引脚数 3
封装 TO-264-3
封装 TO-264-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
IXTK200N10L2 IXYS Semiconductor | 当前型号 | 当前型号 |
IXTK180N15P IXYS Semiconductor | 类似代替 | IXTK200N10L2和IXTK180N15P的区别 |
IXTX200N10L2 IXYS Semiconductor | 功能相似 | IXTK200N10L2和IXTX200N10L2的区别 |