IPW65R080CFDFKSA1

INFINEON  IPW65R080CFDFKSA1  功率场效应管, MOSFET, N沟道, 43.3 A, 700 V, 0.072 ohm, 10 V, 4 V

The IPW65R080CFD is a 650V N-channel CoolMOS™ Power MOSFET with integrated fast body diode and improved energy efficiency. The softer commutation behaviour and therefore better EMI behaviour gives this MOSFET a clear advantage. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driving losses and enable high power density and efficiency for superior power conversion systems. The latest state-of-the-art generation of high voltage power MOSFETs makes AC-DC power supplies more efficient, more compact, lighter and cooler than ever before.

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Limited voltage overshoot during hard commutation

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Easy to design in

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Low switching losses due to low Qrr at repetitive commutation on body diode

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Self limiting di/dt and dv/dt

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Low Qoss

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Reduced turn on and turn off delay times