IPL65R099C7概述
N沟道 650V 21A
Summary of Features:
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650V voltage
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Revolutionary best-in-class R DSon/package
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Reduced energy stored in output capacitance Eoss
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Lower gate charge Qg
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Space saving through use of smaller packages or reduction of parts
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12 years manufacturing experience in superjunction technology
Benefits:
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Improved safety margin and suitable for both SMPS and solar inverter applications
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Lowest conduction losses/package
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Low switching losses
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Better light load efficiency
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Increasing power density
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Outstanding CoolMOS™ quality
Target Applications:
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Telecom
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Server
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Solar
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PC power
IPL65R099C7中文资料参数规格 技术参数
极性 N-CH
耗散功率 128 W
漏源极电压Vds 650 V
连续漏极电流Ids 21A
上升时间 5 ns
输入电容Ciss 2140pF @400VVds
下降时间 12 ns
工作温度Max 150 ℃
工作温度Min -40 ℃
耗散功率Max 128000 mW
外形尺寸
长度 8 mm
高度 1.10 mm
封装 VSON EP
其他
产品生命周期 Active
包装方式 Tape & Reel TR
在线购买IPL65R099C7 型号: IPL65R099C7
描述:N沟道 650V 21A