IPB60R280P6

IPB60R280P6图片1
IPB60R280P6图片2
IPB60R280P6概述

N-CH 600V 13.8A

Summary of Features:

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Reduced gate charge Q g
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Higher V th
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Good body diode ruggedness
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Optimized integrated R g
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Improved dv/dt from 50V/ns
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CoolMOS™ quality with over 12 years manufacturing experience in superjunction technology

Benefits:

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Improved effciency especially in light load condition
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Better efficiency in soft switching applications due to earlier turn-off
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Suitable for hard- & soft-switching topologies
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Optimized balance of efficiency and ease of use and good controllability of switching behavior
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High robustness and better efficiency
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Outstanding quality & reliability
IPB60R280P6中文资料参数规格
技术参数

极性 N-CH

漏源极电压Vds 600 V

连续漏极电流Ids 13.8A

封装参数

安装方式 Surface Mount

封装 TO-263-3

外形尺寸

长度 10 mm

宽度 9.25 mm

高度 4.4 mm

封装 TO-263-3

物理参数

工作温度 -55℃ ~ 150℃

其他

产品生命周期 Active

制造应用 PFC stages for, PWM stages TTF, LLC for, , telecom rectifier,

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

在线购买IPB60R280P6
型号: IPB60R280P6
制造商: Infineon 英飞凌
描述:N-CH 600V 13.8A

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