IRFW644B

250V N沟道MOSFET 250V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using ’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converter and switch mode power supplies.

Features

• 14A, 250V, RDSon= 0.28Ω@VGS= 10 V

• Low gate charge typical 47 nC

• Low Crss typical 30 pF

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability