IRL620S

MOSFET N-CH 200V 5.2A D2PAK

Description

Third Generation HEXFETs from provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Isolated Package

High Voltage Isolation = 2.5KVRMS

Sink to Lead Creepage Dist. 4.8mm

Logic-Level Gate Drive

RDSON Specified at VGS = 4V & 5V

Fast Switching

Ease of paralleling