JAN2N6798

JAN2N6798概述

每N沟道MOSFET合格MIL -PRF-五百五十七分之一万九千五百 N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557

This family of switching transistors is military qualified up to the JANTXV level for high-reliability applications.  The 2N6798 part number is also qualified to the JANS level.  These devices are also available in a low profile U-18 LCC surface mount package.  also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages.

JAN2N6798中文资料参数规格
技术参数

耗散功率 800mW Ta, 25W Tc

漏源极电压Vds 200 V

耗散功率Max 800mW Ta, 25W Tc

封装参数

安装方式 Through Hole

封装 TO-205

外形尺寸

封装 TO-205

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Obsolete

包装方式 Bulk

符合标准

RoHS标准 Non-Compliant

含铅标准 Contains Lead

数据手册

在线购买JAN2N6798
型号: JAN2N6798
描述:每N沟道MOSFET合格MIL -PRF-五百五十七分之一万九千五百 N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557
替代型号JAN2N6798
型号/品牌 代替类型 替代型号对比

JAN2N6798

Microsemi 美高森美

当前型号

当前型号

IRFF230

英飞凌

功能相似

JAN2N6798和IRFF230的区别

2N6798

英飞凌

功能相似

JAN2N6798和2N6798的区别

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