Trans IGBT Chip N-CH 650V 250A 880000mW 3Pin3+Tab PLUS 247
This IGBT transistor from Ixys Corporation is an electronic switch that can handle large currents with very little gate current drive. It has a maximum collector emitter voltage of 650 V. Its maximum power dissipation is 880000 mW. This device is made with xpt technology. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. It is made in a single configuration.
| 型号 | 品牌 | 下载 |
|---|---|---|
| IXXX110N65B4H1 | IXYS Semiconductor | 下载 |
| IXXX160N65B4 | IXYS Semiconductor | 下载 |
| IXXX100N60B3H1 | IXYS Semiconductor | 下载 |
| IXXX300N60B3 | IXYS Semiconductor | 下载 |
| IXXX160N65C4 | IXYS Semiconductor | 下载 |
| IXXX100N60C3H1 | IXYS Semiconductor | 下载 |
| IXXX300N60C3 | IXYS Semiconductor | 下载 |
| IXXX200N65B4 | IXYS Semiconductor | 下载 |