IRFD123PBF数据手册PDF_IRFD123PBF中文资料-锐单商城

IRFD123PBF概述

VISHAY IRFD123PBF 场效应管, MOSFET, N沟道, 100V, 1.3A

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-effectiveness.

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• For Automatic Insertion

• End Stackable

• 175 °C Operating Temperature

• Fast Switching

• Ease of Paralleling

• Lead Pb-free Available

贸泽:
MOSFET N-Chan 100V 1.3 Amp

艾睿:
Trans MOSFET N-CH 200V 0.6A 4-Pin HVMDIP

富昌:
单 N沟道 100 V 0.27 Ohms 通孔功率Mosfet - HVMDIP

Chip1Stop:
Trans MOSFET N-CH 200V 0.6A 4-Pin HVMDIP

Verical:
Trans MOSFET N-CH 200V 0.6A 4-Pin HVMDIP

Newark:
# VISHAY IRFD123PBF MOSFET Transistor, N Channel, 1.3 A, 100 V, 270 mohm, 10 V, 2 V

IRFD123PBF数据文档