MMBZ15VALT1 瞬态抑制二极管TVS/ESD 12V 1.9A 0.225W/225mW SOT23-15V 标记15A
These dual monolithic silicon Zener diodes are designed for applications requiring transient overvoltage protection capability. They are intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. Their dual junction common anode design protects two separate lines using only one package. These devices are ideal for situations where board space is at a premium.
Features
• Pb−Free Packages are Available
• SOT−23 Package Allows Either Two Separate Unidirectional Configurations or a Single Bidirectional Configuration
• Working Peak Reverse Voltage Range − 3 V to 26 V
• Standard Zener Breakdown Voltage Range − 5.6 V to 33 V
• Peak Power − 24 or 40 Watts @ 1.0 ms Unidirectional, per Figure 5 Waveform
• ESD Rating of Class N exceeding 16 kV per the Human Body Model
• Maximum Clamping Voltage @ Peak Pulse Current
• Low Leakage < 5.0 A
• Flammability Rating UL 94 V−O
型号 | 品牌 | 下载 |
---|---|---|
MMBZ15VALT1 | ON Semiconductor 安森美 | 下载 |
MMBZ9V1ALT1G | ON Semiconductor 安森美 | 下载 |
MMBZ18VAL,215 | NXP 恩智浦 | 下载 |
MMBZ18VALT1G | ON Semiconductor 安森美 | 下载 |
MMBZ12VAL,215 | NXP 恩智浦 | 下载 |
MMBZ18VCL,215 | NXP 恩智浦 | 下载 |
MMBZ6V2AL,215 | NXP 恩智浦 | 下载 |
MMBZ10VAL,215 | NXP 恩智浦 | 下载 |
MMBZ12VDL,215 | NXP 恩智浦 | 下载 |
MMBZ15VDL,215 | NXP 恩智浦 | 下载 |
MMBZ33VAL,215 | NXP 恩智浦 | 下载 |