FM25V10-GTR

FM25V10 系列 1 Mb128K x 8 3 V 表面贴装 串行 F-RAM 存储器 - SOIC-8

Description

The FM25V10 is a 1-megabit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 10 years while eliminating the complexities, overhead, and system level reliability problems caused by Serial Flash and other nonvolatile memories.

Features

1M bit Ferroelectric Nonvolatile RAM

• Organized as 131,072 x 8 bits

• High Endurance 100 Trillion 1014 Read/Writes

• 10 Year Data Retention

• NoDelay™ Writes

• Advanced High-Reliability Ferroelectric Process

Very Fast Serial Peripheral Interface - SPI

• Up to 40 MHz Frequency

• Direct Hardware Replacement for Serial Flash

• SPI Mode 0 & 3 CPOL, CPHA=0,0 & 1,1

Write Protection Scheme

• Hardware Protection

• Software Protection

Device ID and Serial Number

• Device ID reads out Manufacturer ID & Part ID

• Unique Serial Number FM25VN10

Low Voltage, Low Power

• Low Voltage Operation 2.0V – 3.6V

• 90μA Standby Current typ.

• 5μA Sleep Mode Current typ.

Industry Standard Configurations

• Industrial Temperature -40 C to +85 C

• 8-pin “Green”/RoHS SOIC Package