FQI9N25C

250V N沟道MOSFET 250V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using ’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Features

• 8.8A, 250V, RDSon = 0.43Ω @VGS = 10 V

• Low gate charge typical 26.5 nC

• Low Crss typical 45.5 pF

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability