MMBT6427

FAIRCHILD SEMICONDUCTOR  MMBT6427  单晶体管 双极, 达林顿, NPN, 40 V, 350 mW, 1.2 A, 10000 hFE

集电极-基极反向击穿电压VBRCBOCollector-Base VoltageVCBO| 40V \---|--- 集电极-发射极反向击穿电压VBRCEOCollector-EmitterVoltageVCEO| 40V 集电极连续输出电流ICCollector CurrentIC| 1.2A 截止频率fTTranstion FrequencyfT| 直流电流增益hFEDC Current GainhFE| 140000 @ 5V,0.5A 管压降VCE（sat）Collector-Emitter SaturationVoltage| 1.5V 耗散功率PcPower Dissipation| 350mW/0.35W Description & Applications| • This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. 描述与应用| •为需要集电流增益可达到1A而设计

贸泽:
Darlington Transistors NPN Transistor Darlington

艾睿:
Trans Darlington NPN 40V 1.2A 3-Pin SOT-23 T/R

安富利:
Trans Darlington NPN 40V 1.2A 3-Pin SOT-23 T/R

富昌:
MMBT6427系列 40 V CE击穿 1.2 A NPN 达林顿晶体管 - SOT-23

Chip1Stop:
Trans Darlington NPN 40V 1.2A 3-Pin SOT-23 T/R

TME:
Transistor: NPN; bipolar; Darlington; 40V; 1.2A; 350mW; SOT23

Verical:
Trans Darlington NPN 40V 1.2A 350mW 3-Pin SOT-23 T/R

Newark:
# FAIRCHILD SEMICONDUCTOR  MMBT6427  Bipolar BJT Single Transistor, Darlington, NPN, 40 V, 350 mW, 1.2 A, 10000 hFE

Win Source:
TRANS NPN DARL 40V 1.2A SOT-23

DeviceMart:
TRANSISTOR DARL NPN SOT-23