IXFX20N120P

IXYS SEMICONDUCTOR  IXFX20N120P  功率场效应管, MOSFET, N沟道, 20 A, 1.2 kV, 0.57 ohm, 10 V, 6.5 V

通孔 N 通道 20A（Tc） 780W（Tc） PLUS247™-3

得捷:
MOSFET N-CH 1200V 20A PLUS247-3

贸泽:
MOSFET 26 Amps 1200V 1 Rds

e络盟:
晶体管, MOSFET, N沟道, 20 A, 1.2 kV, 0.57 ohm, 10 V, 6.5 V

艾睿:
Make an effective common source amplifier using this IXFX20N120P power MOSFET from Ixys Corporation. Its maximum power dissipation is 780000 mW. This device utilizes hiperfet technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.

Verical:
Trans MOSFET N-CH 1.2KV 20A 3-Pin3+Tab PLUS 247

Newark:
# IXYS SEMICONDUCTOR  IXFX20N120P  Power MOSFET, HiPerFET, Polar, N Channel, 20 A, 1.2 kV, 0.57 ohm, 10 V, 6.5 V